Proiect PD 443 / 2010:
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Abstract
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:: În Română

ORGANOMETALLIC AND COORDINATION TIN COMPOUNDS – PRECURSORS FOR ELECTRONIC MATERIALS
Project timespan:
2010 (5 months) – 2011 – 2012 (7 months)
2010 (5 months) – 2011 – 2012 (7 months)
PROJECT SUMMARY
This project is focused on the synthesis and structural characterization of new organometallic or coordination Sn(II) and Sn(IV) compounds with Sn-chalcogen bonds, of type Sn(EAr)2, SnCl2(EAr)2, RxSn(EAr)4-x or ArxSn(ER)4-x (E = Se, Te, Ar = aryl group with pendant arm, R = small organic group - Me, nBu, Ph, Tol, etc., x = 1-3), with monomeric structure. Such compounds will be used as single source precursors in MOCVD processes in order to obtain thin films with semiconductor properties. The thermal behavior of the new chemical species which will be used as single source precursors (complexes with Sn-chalcogen bonds) or dual source precursors [a combination of an organo-chalcogen compound of type Ar2E2 or ArEX and an organo-tin(II) or -tin(IV) compound] for thin films in MOCVD processes will be investigated.
This project is focused on the synthesis and structural characterization of new organometallic or coordination Sn(II) and Sn(IV) compounds with Sn-chalcogen bonds, of type Sn(EAr)2, SnCl2(EAr)2, RxSn(EAr)4-x or ArxSn(ER)4-x (E = Se, Te, Ar = aryl group with pendant arm, R = small organic group - Me, nBu, Ph, Tol, etc., x = 1-3), with monomeric structure. Such compounds will be used as single source precursors in MOCVD processes in order to obtain thin films with semiconductor properties. The thermal behavior of the new chemical species which will be used as single source precursors (complexes with Sn-chalcogen bonds) or dual source precursors [a combination of an organo-chalcogen compound of type Ar2E2 or ArEX and an organo-tin(II) or -tin(IV) compound] for thin films in MOCVD processes will be investigated.
THE MAIN GOAL
This project is focused on the synthesis of new tin complexes with tin-chalcogen bonds, that could be further used as precursors for SnE (E = Se, Te) thin films with semiconducting properties, by vapor phase deposition methods (MOCVD). To accomplish this aim, some steps need to be followed:
- design of new hypervalent organochalcogen ligands, stabilized by N→E (E = Se, Te) intramolecular interactions.
- design of new tin complexes with tin-chalcogen (Se, Te) bonds, containing tin halides (SnCl2 or SnCl4) or organotin fragments of type RxSn (R = Me, Ph, nBu) and hypervalent organo-chalcogen ligands.
- design of new hypervalent organotin compounds, stabilised by N→Sn intramolecular coordination.
- design of new tin complexes with tin-chalcogen bonds (Se, Te), in which organochalcogen ligands of type RE- (R = Ph, Tol; E = Se, Te) are bonded to organotin fragments containing aromatic groups with pendant arms, capable for N→Sn intramolecular coordination.
- structural characterization both in solution and in solid state of the new species, studies concerning the thermal behavior.
- use of compounds with tin-chalcogen bonds in MOCVD processes and the characterization of the obtained thin films.
This project is focused on the synthesis of new tin complexes with tin-chalcogen bonds, that could be further used as precursors for SnE (E = Se, Te) thin films with semiconducting properties, by vapor phase deposition methods (MOCVD). To accomplish this aim, some steps need to be followed:
- design of new hypervalent organochalcogen ligands, stabilized by N→E (E = Se, Te) intramolecular interactions.
- design of new tin complexes with tin-chalcogen (Se, Te) bonds, containing tin halides (SnCl2 or SnCl4) or organotin fragments of type RxSn (R = Me, Ph, nBu) and hypervalent organo-chalcogen ligands.
- design of new hypervalent organotin compounds, stabilised by N→Sn intramolecular coordination.
- design of new tin complexes with tin-chalcogen bonds (Se, Te), in which organochalcogen ligands of type RE- (R = Ph, Tol; E = Se, Te) are bonded to organotin fragments containing aromatic groups with pendant arms, capable for N→Sn intramolecular coordination.
- structural characterization both in solution and in solid state of the new species, studies concerning the thermal behavior.
- use of compounds with tin-chalcogen bonds in MOCVD processes and the characterization of the obtained thin films.
BUDGET STRUCTURE
NAME OF BUDGET CHAPTER | VALUE 2010 (lei) |
VALUE 2011 (lei) |
VALUE 2012 (lei) |
TOTAL VALUE (lei) |
STAFF EXPENSES | 38.500 | 92.400 | 53.900 | 184.800 |
INDIRECT COSTS | 6.350 | 15.654,06 | 8.890 | 30.894,06 |
LOGISTICS COSTS | 25.000 | 47.386 | 35.000 | 107.386 |
MOBILITY EXPENSES | 0 | 16.754,59 | 0 | 16.754,59 |
TOTAL | 6.9850 | 172.194,65 | 97.790 | 339.834,65 |
RESULTS
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Butyltrichlorido{2-[(diisopropylammonio)methyl]phenyl}tin(IV) dichloromethane monosolvate
Adina Rotar, Richard A. Varga and Malgorzata Staninska, Acta Crystallogr. E, 2011, 67, m56. -
Crystal and molecular structure of potassium 18-crown-6-[2,6-bis(dimethylaminomethyl) phenyl]tin(IV) tetrafluoride
A. Rotar, R.A. Varga, M. Schürmann, C. Silvestru and K. Jurkschat., Main Group Met. Chem., 2011, 34, 57. -
Synthesis, spectroscopic characterization, and structural studies of new hypervalent organotin(IV) complexes
containing NCE ligands (E = Se, S)
A. Rotar, C. Coza, R. Suteu and A. Silvestru, J. Organomet. Chem., 2012, in preparation.